Diodes ZXT13P12DE6 - Manual

ISSUE 1 - DECEMBER 1999
ZXT13P12DE6
SuperSOT4™
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-12V; R
SAT
= 37m ; I
C
= -4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• h
FE
characterised up to 15A
• I
C
=4A Continuous Collector Current
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH
(mm) QUANTITY
PER REEL
ZXT13P12DE6TA 7 8mm embossed 3000 units
ZXT13P12DE6TC 13 8mm embossed 10000 units
DEVICE MARKING
P12D
Top View
1
SOT23-6
C
E B
C C
C