beautypg.com

Diodes ZTX649 User Manual

Ztx649, Npn silicon planar medium power transistor

background image

NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 2 – APRIL 94
FEATURES
* 25 Volt V

CEO

* 2 Amp continuous current
* Low saturation voltage
* P

tot

=1 Watt

APPLICATIONS
* Motor driver
* DC-DC converters

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

35

V

Collector-Emitter Voltage

V

CEO

25

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

6

A

Continuous Collector Current

I

C

2

A

Power Dissipation at T

amb

=25°C

derate above 25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

35

V

I

C

=100

µ

A

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

25

V

I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

5

V

I

E

=100

µ

A

Collector Cut-Off

Current

I

CBO

0.1

10

µ

A

µ

A

V

CB

=30V

V

CB

=30V,

T

amb

=100°C

Emitter Cut-Off Current I

EBO

0.1

µ

A

V

EB

=4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.12

0.23

0.3

0.5

V

V

I

C

=1A, I

B

=100mA*

I

C

=2A, I

B

=200mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

0.9

1.25

V

I

C

=1A, I

B

=100mA*

Base-Emitter

Turn-On Voltage

V

BE(on)

0.8

1

V

IC=1A, V

CE

=2V*

Static Forward Current

Transfer Ratio

h

FE

70

100

75

15

200

200

150

50

300

I

C

=50mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

I

C

=2A, V

CE

=2V*

I

C

=6A, V

CE

=2V*

Transition Frequency

f

T

150

240

MHz

I

C

=100mA, V

CE

=5V

f=100MHz

E-Line

TO92 Compatible

ZTX649

3-216

C

B

E

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Output Capacitance

C

obo

25

50

pF

V

CB

=10V f=1MHz

Switching Times

t

on

55

ns

I

C

=500mA, V

CC

=10V

I

B1

=I

B2

=50mA

t

off

300

ns

*Measured under pulsed conditions. Pulse Width=300

µ

s. Duty cycle

2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance:Junction to Ambient

1

Junction to Ambient

2

Junction to Case

R

th(j-amb)1

R

th(j-amb)2

†

R

th(j-case)

175

116

70

°C/W

°C/W

°C/W

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ZTX649

-40

0.0001

Derating curve

T

-Temperature

(°C)

M

ax Po

we

r D

is

sipat

io

n

- (

W

a

tts)

Maximum transient thermal impedance

Pulse Width (seconds)

T

h

e

rm

a

l R

esis

ta

nce (

°C/

W

)

10

100

1

0.1

0.01

-20

0

20 40

60 80 100 120

200

180

160

140

0.001

0

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

t

1

t

P

D=t

1

/t

P

1.0

0.5

2.0

1.5

Case temperature

2.5

Ambient temperat

ure

0

D=1 (D.C.)

3-217