Ztx1048a, Absolute maximum ratings, Electrical characteristics (at t – Diodes ZTX1048A User Manual
Page 2: 25°c unless otherwise stated)
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 - JANUARY 1995
Full characterised data now available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX1048A
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
17.5
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
20
A
Continuous Collector Current
I
C
4
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25°C
P
tot
1
W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200
°C
ZTX1048A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX1048A
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50
85
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
CES
50
85
V
IC=100
µ
A
Collector-Emitter
Breakdown Voltage
V
CEO
17.5
24
V
IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
50
85
V
IC=100
µ
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.7
V
I
E
=100
µ
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
VCES=35V
Collector-Emitter Saturation
Voltage
V
CE(sat)
27
55
110
210
45
75
150
245
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=4A, I
B
=20mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
860
950
mV
I
C
=4A, I
B
=20mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
860
950
mV
IC=4A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
280
300
300
220
50
440
450
450
330
80
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
60
80
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
130
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
t
off
180
ns
I
C
=4A, I
B
=
±
40mA, V
CC
=10V
ZTX1048A
C
B
E
E-Line
TO92 Compatible
3-337
3-338