Diodes ZDT749 - Manual (Page 3)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-35 V I
C
=-100 µ A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-25 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V I
E
=-100 µ A, I
C
=0
Collector Cutoff
Current
I
CBO
-0.1
-10
µ A
µ A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
Emitter Cutoff Current I
EBO
-0.1 µ A V
EB
=-4V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.12
-0.23
-0.3
-0.5
V
V
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 -1.25 V I
C
=1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8 -1 V I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
Transition Frequency f
T
100 160 MHz I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance C
obo
55 100 pF V
CB
=-10V f=1MHz
Switching Times t
on
40 ns I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
450 ns
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
ZDT749 ZDT749
TYPICAL CHARACTERISTICS
V CE(sat) v I C
I C - Collector Current (Amps)
V
- (
Vo
lts)
I C - Collector Current (Amps) I C - Collector Current (Amps)
h FE v I C V BE(sat) v I C
I C - Collector Current (Amps)
V BE(on) v I C
h
- Gai
n
V
- (
Vo
lts)
V
- (
Vo
lts)
40
80
120
160
200
Switching Speeds
I C - Collector Current (Amps)
Sw
itc
hi
ng
ti
m
e
0.1 1
I B1 =I B2 =I C /10
0.01
ts
tf
td tr
0.001 1 0.01 0.1
ts
ns
600
200
1000
1200
td
tr
tf
ns
80
40
120
160
0
140
100
60
20
V CE =2V
I C /I B =10
V CE =2V
V CE =-10V
0.6
1.0
1.2
0.8
0.4
0.6
1.0
1.2
0.8
0.4
0.2
0.6
1.0
0.8
0.4
I C /I B =100
I C /I B =10
0.001 1 0.01 0.1 10
I C /I B =100
0.001 1 0.01 0.1 10
0
1.2
1.6
1.8
1.4
0.001 1 0.01 0.1 10
10
3 - 353 3 - 352