Diodes ZDT1048 - Manual (Page 3)

ZDT1048
Issue 2 - December 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
50 85 V I
C
=100µA
Collector-emitter
breakdown voltage V
CES
50 85 V I
C
=100µA
Collector-emitter
breakdown voltage V
CEO
17.5 24 V I
C
=10mA
Collector-emitter
breakdown voltage V
CEV
50 85 V I
C
=100µA, V
EB
=1V
Emitter-base breakdown
voltage V
(BR)EBO
5 8.7 V I
E
=100µA
Collector cut-off current I
CBO
0.3 10 nA V
CB
=35V
Emitter cut-off current I
EBO
0.3 10 nA V
EB
=4V
Collector-emitter cut-off
current I
CES
0.3 10 nA I
CES
=35V
Collector-emitter
saturation voltage V
CE(sat)
27
55
120
200
200
45
75
160
240
300
mV
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA (*)
I
C
=1A, I
B
=10mA (*)
I
C
=2A, I
B
=10mA (*)
I
C
=5A, I
B
=100mA (*)
I
C
=5A, I
B
=50mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤ 2%
Base-emitter saturation
voltage V
BE(sat)
1000 1100 mV I
C
=5A, I
B
=100mA (*)
Base-emitter turn on
voltage V
BE(on)
900 1000 mV I
C
=5A, V
CE
=2V (*)
Static forward
current transfer
ratio h
FE
280
300
300
250
50
440
450
450
300
80
1200
I
C
=10mA, V
CE
=2V (*)
I
C
=0.5A, V
CE
=2V (*)
I
C
=1A, V
CE
=2V (*)
I
C
=5A, V
CE
=2V (*)
I
C
=20A, V
CE
=2V (*)
Transition frequency f
T
150 MHz I
C
=50mA, V
CE
=10V
f=50MHz
Output capacitance C
obo
60 80 pF V
CB
=10V, f=1MHz
Switching times t
on
120 ns I
C
=4A, I
B
=40mA,V
CC
=10V
t
off
250 ns I
C
=4A, I
B
=±40mA,V
CC
=10V