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Diodes ZDT1049 User Manual

Zdt1049, Sm-8 dual npn medium power high gain transistors

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SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS

ISSUE 1 – JANUARY 1996

PARTMARKING DETAIL – T1049

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

80

V

Collector-Emitter Voltage

V

CEO

25

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

20

A

Continuous Collector Current

I

C

5

A

Base Current

I

B

500

mA

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

Total Power Dissipation at T

amb

= 25°C*

Any single die “on”

Both die “on” equally

P

tot

2.25

2.75

W

W

Derate above 25°C*

Any single die “on”

Both die “on” equally

18

22

mW/ °C

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die “on”

Both die “on” equally

55.6

45.5

°C/ W

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

ZDT1049

SM-8

(8 LEAD SOT223)

C

1

C

1

C

2

C

2

B

1

E

1

B

2

E

2

3 - 360