Sda004, Maximum ratings, Thermal characteristics – Diodes SDA004 User Manual
Page 2: Electrical characteristics
SDA004
Document number: DS30452 Rev. 9 - 2
2 of 5
February 2011
© Diodes Incorporated
SDA004
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80 V
Forward Continuous Current (Note 6)
I
FM
500 mA
Repetitive Peak Forward Current @ T
p
= 5
μs, f = 50kHz (Note 6)
I
FRM
1000 mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0
μs
@ t = 1.0s
I
FSM
20
1.0
A
Clamping Voltage @ I
pp
= 20A (Note 7)
8x20
μs Waveform
V
C
16 V
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 6)
P
D
200 mW
Thermal Resistance, Junction to Ambient Air (Note 6)
R
θJA
625
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Reverse Breakdown Voltage (Note 8)
V
(BR)R
80
⎯
⎯
V
I
R
= 100
μA
Forward Voltage
V
F
0.62
⎯
⎯
⎯
⎯
0.72
0.93
1.0
1.25
V
I
F
= 5.0mA
I
F
= 20mA
I
F
= 100mA
I
F
= 150mA
Reverse Current (Note 8)
I
R
⎯
⎯
100
50
30
25
nA
μA
μA
nA
V
R
= 70V
V
R
= 75V, T
J
= 150
°C
V
R
= 25V, T
J
= 150
°C
V
R
= 20V
Capacitance, Between I/O Lines (I/O1 & I/O2)
C
LL
⎯
2.5 4.0 pF
V
R
= 0V, f = 1.0MHz
Capacitance Between I/O Line and Ground
C
LG
⎯
3.3 5.3 pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
⎯
4.0 ns
V
R
= 6V, I
F
= 5mA
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at7. Referenced to V
P
or V
N
.
8. Short duration pulse test used to minimize self-heating effect.