Diodes RS1A/B - RS1M/B - Manual (Page 2)

RS1A/B - RS1M/B
Document number: DS15002 Rev. 13 - 2
2 of 4
www.diodes.com
September 2010
© Diodes Incorporated
RS1A/B - RS1M/B
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol
RS1
A/AB
RS1
B/BB
RS1
D/DB
RS1
G/GB
RS1
J/JB
RS1
K/KB
RS1
M/MB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 4) V RRM
V
RWM
V
R
50 100 200 400 600 800 1000 V
RMS Reverse Voltage V
R(RMS)
35 70 140 280 420 560 700 V
Average Rectified Output Current @ T T = 120
°C
I O
1.0 A
Non-Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 5) R θJT 20 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
RS1
A/AB
RS1
B/BB
RS1
D/DB
RS1
G/GB
RS1
J/JB
RS1
K/KB
RS1
M/MB
Unit
Forward Voltage Drop @ I
F
= 1.0A V
FM
1.3 V
Peak Reverse Current @ T A = 25
°C
at Rated DC Blocking Voltage (Note 4) @ T
A
= 125
°C
I RM
5.0
200
µA
Reverse Recovery Time (Note 6) t
rr
150 250 500 ns
Typical Total Capacitance (Note 7) C
T
15 pF
Notes: 4. Short duration pulse test used to minimize self-heating effect.
5. Valid provided that terminals are kept at ambient temperature.
6. Reverse recovery test conditions: I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
0
0.4
1.2
25 50 75 100 125 150 175
I,
A
V
E
R
A
G
E
R
E
C
T
IF
IE
D
C
U
R
R
EN
T
(A
)
O
T , TERMINAL TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
T
°
0.2
0.6
0.8
1.0
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6
I I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F,
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 25 C
J
o