Diodes SBRT20U50SLP - Manual (Page 2)

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SBRT20U50SLP
Document number: DS36248 Rev. 4 - 2
2 of 5
www.diodes.com
February 2014
© Diodes Incorporated
SBRT20U50SLP
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
50 V
RMS Reverse Voltage V
R(RMS)
35 V
Average Rectified Output Current I
O
20 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
200 A
Non-Repetitive Avalanche Energy
(T
J
= +25°C, I
AS
= 14.5A, L = 8.5mH)
E
AS
640 mJ
Repetitive Peak Avalanche Energy (1µs, +25°C) P
ARM
40000 W
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) R
θJA
12 °C/W
Operating Temperature Range T
J
-55 to +150 °C
Storage Temperature Range T
STG
-55 to +175 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop (Note 6) V
F
—
— 0.375
0.445 0.420
0.500
V
I
F
= 10A, T
J
= +25°C
I
F
= 20A, T
J
= +25°C
Leakage Current (Note 6) I
R
—
— 0.144
—
0.500
100
mA
V
R
= 50V, T
J
= +25°C
V
R
= 50V, T
J
= +125°C
Total Capacitance C
T
— 350 — pF V
R
= 50V, f = 1MHz
Notes: 5. Device mounted on Al substrate PCB (30mm*30mm) with additional heat sink (Al 48mm*35mm*80mm)
6. Short duration pulse test used to minimize self-heating effect.
I AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
F(AV)
P
,
P
O
WE
R
DISS
IP
A
T
IO
N (
W
)
D
0
2
4
6
8
10
12
0 5 10 15 20 25
Note 5
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 2 Typical Forward Characteristics
I,
I
N
S
TAN
TAN
E
O
U
S F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
F
T = -55°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.0001
0.001
0.01
0.1
1
10
100
0 100 200 300 400 500
T = 25°C
A