Diodes SBR4U130LP - Manual (Page 2)

SBR is a registered trademark of Diodes Incorporated.
SBR4U130LP
Document number: DS31392 Rev. 4 - 2
2 of 5
www.diodes.com
October 2012
© Diodes Incorporated
SBR4U130LP
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
130 V
RMS Reverse Voltage V
R(RMS)
92 V
Average Rectified Output Current I
O
4 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
40 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance Junction to Ambient
(Note 5)
(Note 6)
R θJA
55
180
°C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V
(BR)R
130 - - V I
R
= 0.1mA
Forward Voltage V
F
-
-
0.68
0.55
-
0.75
0.62
0.88
V
I F = 4A, T J = +25ºC
I
F
= 4A, T
J
= +125ºC
I
F
= 10A, T
J
= +25ºC
Reverse Current (Note 7) I
R
-
- 18
2.5
100
20
µA
mA
V
R
= 130V, T
J
= +25ºC
V
R
= 130V, T
J
= +125ºC
Notes: 5. Device mounted on Polymide Substrate, 140mm 2 copper pad, double sided, PC board.
6. Device mounted on FR-4 Substrate, 1” x 1”, 2oz. Copper, single-sided PC board.
7. Short duration pulse test used to minimize self-heating effect.