Diodes ZHCS750 - Manual (Page 2)

ZHCS750
Document number: DS33218 Rev. 4 - 2
2 of 5
www.diodes.com
January 2014
© Diodes Incorporated
ZHCS750
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Continuous Reverse Voltage V
R
40 V
Continuous Forward Current I
F
750 mA
Forward Voltage @ I
F
= 750mA V
F
490 mV
Average Peak Forward Current; D.C. = 50% I
FAV
1500 mA
Non Repetitive Forward Current
t ≤ 100μs
I
FSM
12 A
t ≤ 10ms 5.2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, T
A
= +25°C P
D
500 mW
Junction Temperature T
J
125 °C
Storage Temperature Range T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V
(BR)R
40 60 — V I
R
= 300µA
Forward Voltage (Note 5) V
F
— 225 280
mV
I
F
= 50mA
— 235 310 I
F
= 100mA
— 290 350 I
F
= 250mA
— 340 420 I
F
= 500mA
— 390 490 I
F
= 750mA
— 440 540 I
F
= 1A
— 530 650 I
F
= 1.5A
Reverse Current (Note 6) I
R
— 50 100 µA V
R
= 30V
Diode Capacitance C
D
— 25 — pF f = 1MHz, V
R
= 25V
Reverse Recovery Time Trr — 12 — ns
Switched from I
F
= 500mA to
I
R
= 500mA
Measured @ I
R
= 50mA
Notes: 5. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
6. Short duration pulse test used to minimize self-heating effect.