Zhcs506, Maximum ratings, Thermal characteristics – Diodes ZHCS506 User Manual
Page 2: Electrical characteristics

ZHCS506
Document number: DS33217 Rev. 4 - 2
2 of 5
www.diodes.com
April 2014
© Diodes Incorporated
ZHCS506
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Continuous Reverse Voltage
V
R
60 V
Continuous Forward Current
I
F
500 mA
Forward Voltage @I
F
=500mA V
F
630 mV
Average Peak Forward Current; D.C. = 50%
I
FAV
1000 mA
Non Repetitive Forward Current
t
≤ 100µs
I
FSM
5.5 A
t
≤ 10ms
2.5 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation, T
A
= +25°C
P
D
330 mW
Junction Temperature
T
J
+125 °C
Storage Temperature Range
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Reverse Breakdown Voltage
V
(BR)R
60 80 — V
I
R
= 200
μA
Forward Voltage (Note 5)
V
F
—
275 310
mV
I
F
= 50mA
—
320 360
I
F
= 100mA
—
415 470
I
F
= 250mA
—
550 630
I
F
= 500mA
—
680 800
I
F
= 750mA
—
820 960
I
F
= 1A
—
1120 1350
I
F
= 1.5A
—
565 —
I
F
= 500mA, T
A
= +100°C
Reverse Current
I
R
— 20 40 μA
V
R
= 45V
Diode Capacitance
C
D
— 20 — pF
f = 1MHz, V
R
= 25V
Reverse Recovery Time
trr
—
10
—
ns
Switched from I
F
= 500mA to
I
R
= 500mA
Measured @ I
R
= 50mA
Note:
5. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle 2%.