Diodes SBR2A40SA - Manual (Page 2)

SBR2A40SA
Document number: DS31769 Rev. 4 - 2
2 of 4
www.diodes.com
December 2010
© Diodes Incorporated
SBR2A40SA
SBR is a registered trademark of Diodes Incorporated.
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
40 V
Average Rectified Output Current (See Figure 1) I
O
2 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
15 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 4) R θJA 110 ºC/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 ºC
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
-
-
- 0.55
0.50
V
I
F
= 2.0A, T
J
= 25ºC
I F = 1.0A, T J = 25ºC
Leakage Current (Note 5) I
R
-
-
- 500
100 μA
mA
V
R
= 40V, T
J
= 25ºC
V
R
= 40V, T
J
= 125ºC
Notes: 4. Device mounted on Polymide substrate, with 1” x 1”, 2 oz. Copper, double-sided PCB board.
5. Short duration pulse test used to minimize self-heating effect.
0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.5 1 1.5 2 2.5
Fig. 1 Forward Power Dissipation
I , AVERAGE FORWARD CURRENT (A)
F(AV)
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N (
W
)
D
0 100 200 300 400 500
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
0.0001
0.001
0.01
0.1
1
10
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A