Diodes SBR12U45LH1 User Manual
Page 3
SBR12U45LH1
Document number: DS35094 Rev. 5 - 2
3 of 5
February 2014
© Diodes Incorporated
SBR12U45LH1
SBR and POWERDI are registered trademarks of Diodes Incorporated.
Note:
9. Device mounted on FR-4 substrate PCB with 10cm*10cm double-sided copper pad.
0
0.5
1
1.5
2
2.5
3
3.5
4
I
, AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 1 Forward Power Dissipation
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
W
)
D
0
5
10
15
4.5
0.0001
0.001
0.01
0.1
1
10
100
0
100
200
300
400
500
600
V ,
FORWARD
VOLTAGE(mV)
F
INSTANTANEOUS
Figure 2 Typical Forward Characteristics
I,
IN
S
TA
N
TA
N
E
O
U
S F
O
R
WA
R
D
F
C
U
R
R
E
N
T
(A
)
T =
A
-55°C
T =
A
25°C
T =
A
85°C
T =
A
125°C
T = 150°C
A
100000
0
5
10
15
20
25
30
35
40
45
V , INSTANTANEOUS REVERSE VOLTAGE(V)
R
Figure 3 Typical Reverse Characteristics
I
, INS
TAN
TANE
O
U
S
R
EVE
R
SE
C
U
R
R
EN
T
(µ
A
)
R
T =
A
-55°C
T =
A
25°C
T =
A
85°C
T =
A
125°C
T = 150°C
A
10000
1
0.1
100
10
1000
100
0
5
10
15
20
25
30
35
40
V , REVERSE VOLTAGE (V)
R
Figure 4 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F)
T
f = 1MHz
1000
10000
100000
T , AMBIENT TEMPERATURE (°C)
A
Figure 5 Forward Current Derating Curve
I,
A
V
E
R
A
G
E F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F(A
V
)
12
25
50
75
100
125
150
10
8
6
4
2
0
14
Note 5
Note 9
175
200
Based on Lead Temp (T ) at T = 200 C
L
J
°
0
25
50
75
100
125
150
0
4.5
9
13.5 18 22.5 27 31.5 36 40.5 45
V , DC REVERSE VOLTAGE (V)
Figure 6 Operating Temperature Derating
R
T
, AM
BI
E
N
T
TE
M
P
ERA
T
URE
(°
C)
A
175
200