Diodes SBR1045D1 - Manual (Page 2)

SBR1045D1
Document number: DS31374 Rev. 7 - 2
2 of 5
www.diodes.com
June 2011
© Diodes Incorporated
SBR1045D1
SBR is a registered trademark of Diodes Incorporated.
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V RRM
V
RWM
V
RM
45 V
RMS Reverse Voltage V
R(RMS)
32 V
Average Rectified Output Current @ T C = 140ºC I O
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
90 A
Repetitive Peak Avalanche Power (1
μs, 25ºC)
P ARM
5000 W
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Case (Note 3)
R θJA
R θJC
29
3
ºC/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 ºC
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 4) V
(BR)R
45 - - V I
R
= 0.45mA
Forward Voltage Drop (per leg) V
F
-
-
-
- 0.42
0.37
-
0.50
0.48
0.41
0.58
0.56
V
I
F
= 5A, T
J
= 25ºC
I
F
= 5A, T
J
= 125ºC
I
F
= 10A, T
J
= 25ºC
I
F
= 10A, T
J
= 125ºC
Leakage Current (Note 4) I R
-
- 50
12 500
40
μA
mA
V
R
= 45V, T
J
= 25ºC
V R = 45V, T J = 125ºC
Total Capacitance C
T
- 400 - pF
V
R
= 5V, f = 1MHz
T
J
= 25ºC
Notes: 3. Device mounted on polymide substrate, 240mm 2 Copper pad, double-sided PC Board.
4. Short duration pulse test used to minimize self-heating effect.
5. Device mounted on polymide substrate, 2” * 2” Copper pad, double-sided PC Board with minimum recommended pad layout.