Diodes SBG3030CT - SBG3045CT - Manual (Page 2)

SBG3030CT - SBG3045CT
Document number: DS30025 Rev. 8 - 2
2 of 5
www.diodes.com
July 2011
© Diodes Incorporated
SBG3030CT - SBG3045CT
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol
SBG
3030CT
SBG
3040CT
SBG
3045CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 3) V RRM
V
RWM
V
R
30 40 45 V
RMS Reverse Voltage V
R(RMS)
21 28 32 V
Average Rectified Output Current @ T C = 100
°C I
O
30 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
I
FSM
250 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 4) R θJC 1.5 °C/W
Operating Temperature Range TJ -55 to +125 °C
Storage Temperature Range T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage, per Element @ I
F
= 15A, T
C
= 25 °C V
FM
0.55 V
Peak Reverse Current @ T J = 25
°C
at Rated DC Blocking Voltage (Note 3) @ T
J
= 100
°C
I
RM
1.0
75
mA
Typical Total Capacitance (Note 5) C
T
420 pF
Notes: 3. Short duration pulse test used to minimize self-heating effect.
4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element.
0
6
12
24
30
18
0 50 100 150
I,
A
V
E
R
A
G
E
R
E
C
T
IF
IE
D
C
U
R
R
EN
T
(A
)
(A
V
)
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Derating Curve
C
°
Total Package
Per Element
0.1
100
1.0
10
0.1 0.5 0.7 0.9 1.1
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
F
0.3
T = 25 C
J
°
PULSE WIDTH
2% Duty Cycle