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Rainbow Electronics MAX669 User Manual

Page 10

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MAX668/MAX669

1.8V to 28V Input, PWM Step-Up
Controllers in µMAX

10

______________________________________________________________________________________

MAX669

LDO

CS+

REF

FREQ

V

CC

SYNC/
SHDN

PGND

FB

GND

N1

EXT

V

IN

= 1.8V to 12V

C3
0.22

µ

F

C2

0.1

µ

F

C4

1

µ

F

R4
100k
1%

R1
0.02

R2
218k
1%

R3
24.9k
1%

C7

220pF

D1

MBRS340T3

C5
68

µ

F

20V

C6
68

µ

F

20V

C8
0.1

µ

F

3

5

7

6

8

2

4

9

1

10

V

OUT

= 12V @ 0.5A

C1

68

µ

F

20V

L1
4.7

µ

H

IRF7401

Figure 2. MAX669 High-Voltage Bootstrapped Configuration

MAX669

LDO

CS+

REF

FREQ

V

CC

SYNC/
SHDN

PGND

FB

GND

N1

EXT

V

IN

= 1.8V to 5V

C3
0.22

µ

F

C2

1

µ

F

R4
100k
1%

R1

0.02

R2
75k
1%

R3
24.9k
1%

C7

220pF

D1

MBRS340T3

C4
68

µ

F

10V

C5
68

µ

F

10V

C6
0.1

µ

F

3

5

7

6

8

2

4

9

1

10

V

OUT

= 5V @ 1A

C1

68

µ

F

10V

L1
4.7

µ

H

FDS6680
IRF7401

Figure 3. MAX669 Low-Voltage Bootstrapped Configuration

Bootstrapped Operation

With bootstrapped operation, the IC is powered from
the circuit output (V

OUT

). This improves efficiency

when the input voltage is low, since EXT drives the FET
with a higher gate voltage than would be available from
the low-voltage input. Higher gate voltage reduces the
FET on-resistance, increasing efficiency. Other (unde-
sirable) characteristics of bootstrapped operation are
increased IC operating power (since it has a higher
operating voltage) and reduced ability to start up with
high load current at low input voltages. If the input volt-

age range extends below 2.7V, then bootstrapped
operation with the MAX669 is the only option.

With V

CC

connected to V

OUT

, as in Figure 2, EXT volt-

age swing is 5V when V

CC

is 5.2V or more, and V

CC

-

0.2V when V

CC

is less than 5.2V. If the output voltage

does not exceed 5.5V, the on-chip regulator can be
disabled by connecting V

CC

to LDO (Figure 3). This

eliminates the LDO forward drop and supplies maxi-
mum gate drive to the external FET.