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Rainbow Electronics MAX555 User Manual

Page 2

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MAX555

300Msps, 12-Bit DAC with
Complementary Voltage Outputs

2

_______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(AV

EE

= DV

EE

= -5.2V, V

REF

= 1.000V, T

MIN

to T

MAX

= 0°C to +70°C, unless otherwise noted.) (Note 2.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

Note 1: Typical thermal resistance, junction-to-case R

θJC

= 25°C/W. See Package Information.

Analog Supply Voltage (AV

EE

) .................................-7V to +0.3V

Digital Supply Voltage (DV

EE

) ..................................-7V to +0.3V

Digital Input Voltage (D0–D11) ...................................-5.5V to 0V
Reference Input Voltage (V

IN

) .................................0V to +1.25V

Reference Input Current....................................0mA to +1.56mA
Output Compliance Voltage (V

OC

)......................-1.25V to +1.0V

Output Common-Mode Voltage (V

CM

) ................-0.25V to +1.0V

Continuous Power Dissipation (T

A

= +70°C)

(without additional heatsink) ..............................................1.3W

Operating Temperature Range...............................0°C to +70°C
Junction Temperature Range (Note 1) .................0°C to +150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C

V

REF

= 1.000V, current out, into

virtual ground, end-point linearity

Major carry, T

A

= +25°C

10% to 90%, T

A

= +25°C

90% to 10%, T

A

= +25°C

V

REF

= 1.000V, voltage out,

VOUT/VIN (Note 3)

±0.024% FS, 1LSB change

D0–D11 = logic 1, V

REF

= 1.000V,

measured at VOUT

±0.1% FS

CONDITIONS

ns

15

Settling Time

4

% FS

-0.05

±0.01

0.05

DLE2

Differential Linearity Error

-0.012

±0.003

0.012

DLE1

pVs

5.6

Glitch Energy

ps

570

t

RISE

Rise Time

ps

410

t

FALL

Fall Time

% FS

-1.0

±0.2

+1.0

GE

Absolute Gain Error

Guaranteed

12-Bit Monotonicity

µA

40

100

I

OS

Output Offset Current

UNITS

MIN

TYP

MAX

SYMBOL

PARAMETER

VOUT

VOUT

V

REF

= 1.000V, current out, into

virtual ground, end-point linearity

VOUT

% FS

-0.05

±0.01

0.05

ILE2

Integral Linearity Error

VOUT

-0.012

±0.006

0.012

ILE1

D0–D11 = logic 0, V

REF

= 0V,

measured at VOUT

µA

3

50

I

LEAK

Output Leakage Current

f

OUT

= 5MHz, f

CLK

= 50MHz

72

f

OUT

= 20MHz, f

CLK

= 100MHz

f

OUT

= 10MHz, f

CLK

= 50MHz

63

68

f

OUT

= 30MHz, f

CLK

= 200MHz

f

OUT

= 30MHz, f

CLK

= 100MHz

57

58

f

OUT

= 40MHz, f

CLK

= 200MHz

54

dBc

f

OUT

= 40MHz, f

CLK

= 250MHz

53

f

OUT

= 40MHz, f

CLK

= 300MHz

f

OUT

= 50MHz, f

CLK

= 250MHz

54

51

f

OUT

= 50MHz, f

CLK

= 300MHz

SFDR

Spurious-Free Dynamic Range

51

nV

√Hz

Bits 0–11 high, T

A

= +25°C

10.6

Output Noise

DC ACCURACY

TIME-DOMAIN PERFORMANCE (Note 4)

DYNAMIC PERFORMANCE (Notes 4, 5)