Rainbow Electronics IRFTS9342TRPBF - Manual (Page 5)

IRFTS9342PbF
www.irf.com 5
Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current
Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 15 . Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
* V
GS
= 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+ -
-
-
ƒ
„
‚
R
G
V
DD
D.U.T *

Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET ® Power MOSFETs
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
0
20
40
60
80
100
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
Ω
)
ID = -5.8A
TJ = 25°C
TJ = 125°C
0 10 20 30 40 50
-ID, Drain Current (A)
20
40
60
80
100
120
140
160
180
200
220
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
Ω
)
Vgs = -4.5V
Vgs = -10V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J) ID
TOP -0.91A
-1.4A
BOTTOM -4.6A
0.0001 0.001 0.01 0.10 1 10
Time (sec)
0
10
20
30
40
50
60
70
80
90
100
P
ow
er
(
W
)