Rainbow Electronics IRFTS9342TRPBF - Manual (Page 2)

IRFTS9342PbF
2 www.irf.com
G
D
S
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400μs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board.
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient e ––– 62.5 °C/W
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V
ΔΒV
DSS
/ ΔT
J
Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 32 40
––– 53 66
V
GS(th)
Gate Threshold Voltage -1.3 ––– -2.4 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -5.5 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 6.8 ––– ––– S
Q
g Total Gate Charge ––– 12 –––
Q
gs Gate-to-Source Charge ––– 1.8 –––
Q
gd Gate-to-Drain Charge ––– 3.1 –––
R
G
Gate Resistance ––– 17 ––– Ω
t
d(on)
Turn-On Delay Time ––– 4.6 –––
t
r
Rise Time ––– 13 –––
t
d(off)
Turn-Off Delay Time ––– 45 –––
t
f
Fall Time ––– 28 –––
C
iss
Input Capacitance ––– 595 –––
C
oss
Output Capacitance ––– 133 –––
C
rss
Reverse Transfer Capacitance ––– 85 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode) Ù
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 20 30 ns
Q
rr
Reverse Recovery Charge ––– 11 17 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= -25μA
V
GS
= -4.5V, I
D
= -4.6A e
m Ω
V
DD
= -15V, V
GS
= -10V
V
DS
= -15V
R
G
= 6.8 Ω
V
DS
= -10V, I
D
= -4.6A
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= -4.6A
I
D
= -4.6A
V
GS
= 0V
V
DS
= -25V
V
DS
= -24V, V
GS
= 0V
T
J
= 25°C, I
F
= -4.6A, V
DD
= -24V
di/dt = 100A/μs eÃ
T
J
= 25°C, I
S
= -4.6A, V
GS
= 0V e
showing the
integral reverse
p-n junction diode.
Conditions
ƒ = 1.0KHz
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -5.8A e
––– ––– -46
––– ––– -2.0
MOSFET symbol
nA
ns
A
pF
nC V
GS
= -10V
V
GS
= -20V
V
GS
= 20V