Adc characteristics (0 ° c to +70 ° c; v, 3v ± 10%), 0v ± 10%) – Rainbow Electronics DS1680 User Manual
Page 19

DS1680
19 of 23
ADC CHARACTERISTICS
(0
°
C to +70
°
C; V
CC
, V
AVD
= 3.3V
±
10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Resistance of Digitizer Film
R
D
250
600
1000
Ω
Resistance of On-Chip Driver
R
DRIVER
15
30
Ω
Parasitic Capacitance Between X-
and Y-Plates of Digitizer
C
XY
5
10
nF
Ladder Resistance
R
REF
8
25
60
k
Ω
ADC Active Current
I
AVDA
320
450
µ
A
5
ADC Standby Current
I
AVDS
50
150
µ
A
6
Reference Current
I
REF
150
550
µ
A
Input Leakage (AIN0, AIN1)
I
LI
10
nA
Analog Input Capacitance
C
IN
10
15
pF
Resolution
10
Bits
Differential Nonlinearity
E
DL
±
0.5
±
1.0
LSB
Integral Nonlinearity
E
IL
±
0.5
±
1.0
LSB
Offset Error
E
OS
±
1.0
±
1.5
LSB
Gain Error
E
G
±
0.25
±
1.0
%
ADC Clock Frequency
F
OSCIN
2.5
MHz
Multiplexer Selector Path
Propagation Delay
t
MUX
120
ns
COEN
Falling Edge to Data Bus
Driven
t
OEA
80
ns
COEN
Rising Edge to Data Bus
High-Z
t
OEZ
80
ns
POWER-FAIL AND RESET CHARACTERISTICS
(0
°
C to +70
°
C; V
CC
= 5.0V
±
10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
PFI Low to
PFO
Low
t
PFD
100
ns
PFI High to
PFO
High
t
PFU
100
ns
V
CC
Detect to
RST
(V
CC
Falling)
t
RPD
100
ns
V
CC
Detect to
RST
(V
CC
Rising)
t
RPU
250
ms
15,16
Reset Active Time
t
RST
250
ms
15
Pushbutton Debounce
PB
DB
250
ms
15
ST
Pulse Width
t
ST
20
ns
Chip-Enable Propagation Delay to
External SRAM
t
CED
8
15
ns
V
CCTP(MAX)
to V
CCSW(MIN)
Fall Time
t
FB
200
µs
20