Electrical characteristics (continued) – Rainbow Electronics MAX16915 User Manual
Page 3
Ideal Diode, Reverse-Battery, and Overvoltage Protection
Switch/Limiter Controllers with External MOSFETs
MAX16914/MAX16915
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 14V, C
GATE1
= 32nF, C
GATE2
= 32nF,
SHDN
= high, T
A
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= +25NC.) (Note 2)
Note 2: All parameters are production tested at T
A
= +25NC. Limits over the operating temperature range are guaranteed by
design and characterization.
Note 3: Guaranteed by design and characterization.
Note 4: The back-charge voltage, V
BC
, is defined as the voltage at SENSE OUT minus the voltage at SENSE IN.
Note 5: Defined as the time from when V
BC
exceeds V
BCTH
(25mV typ) to when V
GATE1
exceeds V
CC
- 3.5V.
Note 6: Defined as the time from when V
BC
falls below V
BCTH
- 50mV to when V
GATE1
falls below V
CC
- 3.5V.
Note 7: Defined as the time from when V
SET
exceeds V
SETTH
(1.20V typ) to when V
GATE2
exceeds V
CC
- 3.5V.
Note 8: Defined as the time from when V
SET
falls below V
SETTH
- 5% (1.14V typ) to when V
GATE2
falls below V
CC
- 3.5V.
Note 9: The external pFETs can turn on t
START
after the IC is powered up and all input conditions are valid.
Note 10: Defined as the time from when V
CC
exceeds the undervoltage-lockout threshold (4.3V max) to when V
GATE1
and V
GATE2
fall below 1V.
Note 11: Defined as the time from when V
CC
falls below V
SENSE OUT
- 25mV to when V
GATE1
reaches V
CC
- 1.75V.
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
TERM On-Resistance
R
TERM
SHDN = high
150
500
I
TERM Output Current
I
TERM
SHDN
= low, V
TERM
= 0V
1.0
F
A
Back-Charge Voltage Fault
Threshold
V
BCTH
V
SENSE OUT
= 14V (Note 4)
18
25
32
mV
Back-Charge Voltage Threshold
Hysteresis
V
BCHY
V
SENSE OUT
= 14V
50
mV
Back-Charge Turn-Off Time
(GATE1)
t
BC
V
CC
= 9.5V, V
SENSE IN
= 9V,
V
SENSE OUT
stepped from 4.9V to 9.5V
(Note 5)
6
10
F
s
Back-Charge Recovery Time
(GATE1)
t
BCREC
V
CC
= 9.5V, V
SENSE IN
= 9V,
V
SENSE OUT
stepped from 9.5V to 4.9V
(Note 6)
18
30
F
s
GATE2 Turn-Off Time
V
CC
= 9.5V, V
SET
rising from 1V to
1.5V (Note 7)
3
F
s
GATE2 Turn-On Time
V
CC
= 9.5V, V
SET
falling from 1.5V to
1V (Note 8)
20
F
s
Startup Response Time
(V
SHDN
Rising)
t
START1
V
CC
= 9.5V, from V
SHDN
rising to
V
GATE_
falling (Note 9)
100
F
s
Startup Response Time
(V
CC
Rising)
t
START2
V
CC
rising from 2V to 4.5V, SHDN =
high (Note 10)
0.150
ms
Reverse-Battery Voltage Turn-Off
Time/UVLO Turn-Off Time
t
REVERSE
V
CC
and V
SENSE IN
falling from 4.25V
to 3.25V, V
SENSE OUT
= 4.25V
(Note 11)
30
F
s
Thermal-Shutdown Temperature
+170
N
C
Thermal-Shutdown Hysteresis
20
N
C
OV Output Low Voltage
V
OVBL
I
SINK
= 600FA
0.4
V
OV Open-Drain Leakage Current
I
OVB
V
SET
= 1.0V
1.0
F
A
SENSE IN Input Current
I
SENSE IN
V
SHDN
= 0/14V
1
5
F
A
SENSE OUT Input Current
I
SENSE OUT
V
SHDN
= 0/14V
2
5
F
A
SET to OV Output Low
Propagation Delay
t
OVBPD
V
CC
= 9.5V, V
SET
rising from 1V to
1.5V to V
OV
falling
3
F
s