C&H Technology CM400DU-12F User Manual
Page 5
CM400DU-12F
Trench Gate Design Dual IGBTMOD™
400 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
4
Rev. 12/09
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
1000
2000
3000
16
12
8
4
0
4000
V
CC
= 300V
V
CC
= 200V
I
C
= 400A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
V
GE
= 0V
10
1
C
ies
C
oes
0
1.0
2.0
3.0
4.0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
6
8
12
10
18
16
14
20
4
3
2
1
0
T
j
= 25°C
I
C
= 160A
I
C
= 800A
I
C
= 400A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
0
200
400
2
1
0
800
600
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
0
200
400
600
800
V
GE
= 20V
15
10
9.5
9
8.5
7.5
8
11
C
res
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
= 15V
R
G
= 3.1 Ω
T
j
= 125°C
Inductive Load
t
f
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
10
3
10
2
10
1
I
rr
T
j
= 25°C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th
(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
• (NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.13°C/W (IGBT)
R
th(j-c)
= 0.18°C/W (FWDi)
Single Pulse
T
C
= 25°C
V
CC
= 300V
V
GE
= 15V
R
G
= 3.1 Ω
T
j
= 25°C
Inductive Load
T
j
= 25°C