C&H Technology CM400DU-12F - Manual (Page 3)

CM400DU-12F
Trench Gate Design Dual IGBTMOD™
400 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
2 Rev. 12/09
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM400DU-12F Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 400 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 800* Amperes
Emitter Current** (Tc = 25°C) IE 400 Amperes
Peak Emitter Current** IEM 800* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 960 Watts
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 40 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts
IC = 400A, VGE = 15V, Tj = 125°C – 1.6 – Volts
Total Gate Charge QG VCC = 300V, IC = 400A, VGE = 15V – 2480 – nC
Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V – – 2.6 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).