Thermal and mechanical characteristics, t, 25°c unless otherwise specified – C&H Technology CM1000DU-34NF User Manual
Page 4
CM1000DU-34NF
Mega Power Dual™ IGBTMOD
1000 Amperes/1700 Volts
3
02/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Thermal and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module, T
C
Reference
—
—
0.032 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/2 Module, T
C
Reference
—
—
0.053 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c')
Q
Per IGBT 1/2 Module,
–
–
0.014
°C/W
T
C
Reference Point Under Chip
Thermal Resistance, Junction to Case
R
th(j-c')
D
Per FWDi 1/2 Module, T
C
Reference
–
–
0.023 °C/W
T
C
Reference Point Under Chip
Contact Thermal Resistance
R
th(c-f)
Per 1/2 Module, Thermal Grease Applied
–
0.016
–
°C/W
External Gate Resistance
R
G
0.47
—
4.7
Ω
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
C
A
PA
CI
TANCE, C
ies
, C
oes
, C
re
s
, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10
0
10
2
10
3
10
2
10
1
10
0
10
-1
10
1
0.5
1.5
1.0
3.0 3.5
2.0
2.5
4.0
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
10
4
EMI
TTER CURRENT
, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECT
OR-EMI
TTER
S
ATURA
TION
V
O
LT
A
GE,
V
CE(sat)
, (V
OL
TS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25°C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECT
OR-EMI
TTER
S
ATURA
TION
V
O
LT
A
GE,
V
CE(sat)
, (V
OL
TS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
3
4
0
500
2
1
0
2500
1500
2000
1000
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
GE
= 0V
C
ies
C
oes
C
res
I
C
= 400A
I
C
= 2000A
I
C
= 1000A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECT
OR CURRENT
, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
V
GE
= 20V
10
11
12
15
13
9
8
T
j
= 25
°C
1200
400
0
800
1600
2000
COLLECT
OR CURRENT
, I
C
, (AMPERES)
1200
400
0
800
1600
2000
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
8
12
16
20
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
4
10
-1