C&H Technology CM1000DU-34NF - Manual (Page 3)

CM1000DU-34NF
Mega Power Dual™ IGBTMOD
1000 Amperes/1700 Volts
2 02/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Ratings Symbol CM1000DU-34NF Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) V
CES
1700 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±20 Volts
Collector Current DC (T
C'
= 104°C)** I
C
1000 Amperes
Peak Collector Current (T
j
≤ 150°C) I
CM
2000* Amperes
Emitter Current (T
C
= 25°C)*** I
E
1000 Amperes
Peak Emitter Current*** I
EM
2000* Amperes
Maximum Collector Dissipation (T
j
< 150°C) (T
C
= 25°C) P
C
3900 Watts
Mounting Torque, M6 Mounting Screws – 40 in-lb
Mounting Torque, M6 Main Terminal Screw – 40 in-lb
Weight (Typical) – 1400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
3500 Volts
Static Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V – – 5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 100mA, V
CE
= 10V 5.5 7.0 8.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 1000A, V
GE
= 15V, T
j
= 25°C – 2.2 2.8 Volts
(Without Lead Resistance) (Chip) I
C
= 1000A, V
GE
= 15V, T
j
= 125°C – 2.45 – Volts
Module Lead Resistance R
(lead)
I
C
= 1000A, Terminal-chip – 0.286 – mΩ
Total Gate Charge Q
G
V
CC
= 1000V, I
C
= 1000A, V
GE
= 15V – 6000 – nC
Emitter-Collector Voltage*** V
EC
I
E
= 1000A, V
GE
= 0V – 2.3 3 Volts
Dynamic Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 220 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 25 nF
Reverse Transfer Capacitance C
res
– – 4.7 nF
Inductive Turn-on Delay Time t
d(on)
V
CC
= 1000V, – – 600 ns
Load Rise Time t
r
I
C
= 1000A, I
E
= 1000A, – – 150 ns
Switch Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, – – 900 ns
Times Fall Time t
f
R
G
= 0.47Ω, – – 200 ns
Diode Reverse Recovery Time*** t
rr
Inductive Load – – 450 ns
Diode Reverse Recovery Charge*** Q
rr
Switching Operation – 90 – µC
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
** TC' measurement points is just under the chips. If this value is used, R th(f-a) should be measured just under the chips.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).