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Vishay high power products – C&H Technology 113MT..KPbF Series User Manual

Page 8

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Document Number: 94353

For technical questions, contact: [email protected]

www.vishay.com

Revision: 29-Apr-08

7

53-93-113MT..KPbF Series

Three Phase Controlled Bridge

(Power Modules), 55 A to 110 A

Vishay High Power Products

Fig. 14 - Maximum Non-Repetitive Surge Current

Fig. 15 - Maximum Non-Repetitive Surge Current

Fig. 16 - Thermal Impedance Z

thJC

Characteristics

Fig. 17 - Gate Characteristics

800

900

700

600

500

400

1000

Peak Half

S

ine Wave

On-

S

tate Current (A)

Number of Equal Amplitude

Half Cycle Current Pulses (N)

10

100

1

At any rated load condition and with
rated V

RRM

applied following surge.

113MT..K Series

Per junction

Initial T

J

= 125 °C

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

900

800

700

600

500

400

1200

1100

1000

Peak Half

S

ine Wave

On-

S

tate Current (A)

Pulse Train Duration (s)

0.01

0.1

1.0

113MT..K Series

Per junction

Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.

Initial T

J

= 125 °C

No voltage reapplied
Rated V

RRM

reapplied

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

Square Wave Pulse Duration (s)

Z

thJC

- Tran

s

ient Thermal

Impedance (K/W)

10

Per junction

53MT..K Series

113MT..K Series

93MT..K Series

Steady state value

R

thJC

= 1.07 K/W

R

thJC

= 0.86 K/W

R

thJC

= 0.70 K/W

(DC operation)

0.01

0.1

1

10

0.001

0.01

0.1

1

Instantaneous Gate Current (A)

In

s

tantaneou

s

Gate Volta

g

e (V)

1000

100

10

(b)

(a)

(4)

(3)

(2)

(1)

(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms

T

J

= -40 °C

T

J

= 25 °C

T

J

= 125 °C

VGD

IGD

Frequency Limited by PG(AV)

53/ 93/ 113MT..K Series

Rectangular gate pulse
a) Recommended load line for

rated dI/dt: 20 V, 30

Ω

tr = 0.5 µs, tp >= 6 µs

b) Recommended load line for
<=

30% rated dI/dt: 20 V, 65

Ω

tr = 1 µs, tp >= 6 µs