C&H Technology 113MT..KPbF Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94353
2 Revision: 29-Apr-08
53-93-113MT..KPbF Series
Vishay High Power Products Three Phase Controlled Bridge
(Power Modules), 55 A to 110 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM
/I
DRM
,
MAXIMUM
AT T
J
= 125 °C
mA
53/52/51MT..K
80 800 900 800
10
100 1000 1100 1000
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
93/92/91MT..K
113/112/111MT..K
80 800 900 800
20
100 1000 1100 1000
120 1200 1300 1200
140 1400 1500 1400
160 1600 1700 1600
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
53MT.K
52MT.K
51MT.K 93MT.K
92MT.K
91MT.K 113MT.K
112MT.K
111MT.K
UNITS
Maximum DC output current
at case temperature
I
O
120° rect. conduction angle
55 90 110 A
85 85 85 °C
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
I
TSM
t = 10 ms No voltage
reapplied
Initial T
J
= T
J
maximum
390 950 1130
A
t = 8.3 ms 410 1000 1180
t = 10 ms 100 % V
RRM
reapplied
330 800 950
t = 8.3 ms 345 840 1000
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied 770 4525 6380
A 2 s
t = 8.3 ms 700 4130 5830
t = 10 ms 100 % V
RRM
reapplied
540 3200 4510
t = 8.3 ms 500 2920 4120
Maximum I 2 √t for fusing
I 2 √t
t = 0.1 to 10 ms, no voltage reapplied 7700 45 250 63 800 A 2 √s
Low level value of
threshold voltage
V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
maximum 1.17 1.09 1.04
V
High level value of
threshold voltage
V
T(TO)2
(I > π x I
T(AV)
), T
J
maximum 1.45 1.27 1.27
Low level value on-state
slope resistance
r
t1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
maximum 12.40 4.10 3.93
m
Ω
High level value on-state
slope resistance
r
t2
(I > π x I
T(AV)
), T
J
maximum 11.04 3.59 3.37
Maximum on-state
voltage drop
V
TM
I
pk
= 150 A, T
J
= 25 °C, t
p
= 400 µs single junction 2.68 1.65 1.57 V
Maximum non-repetitve
rate of rise of turned on
current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
, I
TM
=
π x I
T(AV)
,
I
g
= 500 mA, t
r
< 0.5 µs, t
p
> 6 µs
150 A/µs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, grate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400