Vsk.430..pbf series, Vishay high power products, Power modules) – C&H Technology VSK.430..PbF Series User Manual
Page 3: On-state conduction, Switching, Blocking

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Document Number: 93748
2
Revision: 02-Apr-08
VSK.430..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 430 A
(SUPER MAGN-A-PAK
TM
Power Modules)
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
I
T(AV),
I
F(AV)
180° conduction, half sine wave
430
A
82
°C
Maximum RMS on-state current
I
T(RMS)
180° conduction, half sine wave at T
C
= 82 °C
675
A
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM,
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
15.7
kA
t = 8.3 ms
16.4
t = 10 ms
100 % V
RRM
reapplied
13.2
t = 8.3 ms
13.8
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
1232
kA
2
s
t = 8.3 ms
1125
t = 10 ms
100 % V
RRM
reapplied
871
t = 8.3 ms
795
Maximum I
2
√t for fusing
I
2
√t
t = 0.1 to 10 ms, no voltage reapplied
12 320
kA
2
√s
Low level value of threshold voltage
V
F(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
0.96
V
High level value of threshold voltage
V
F(TO)2
(I >
π x I
T(AV)
), T
J
= T
J
maximum
1.06
Low level value of on-state slope resistance
r
f1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
0.51
m
Ω
High level value of on-state slope resistance
r
f2
(I
>
π x I
T(AV)
), T
J
= T
J
maximum
0.45
Maximum on-state or forward voltage drop
V
TM,
V
FM
I
pk
= 1500 A, T
J
= 25 °C, t
p
= 10 ms sine pulse
1.65
V
Maximum holding current
I
H
T
J
= 25 °C, anode supply 12 V resistive load
500
mA
Typical latching current
I
L
1000
SWITCHING
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum rate of rise of turned-on current
dI/dt
T
J
= T
J
maximum, I
TM
= 400 A, V
DRM
applied
1000
A/µs
Typical delay time
t
d
Gate current 1 A, dI
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
2.0
µs
Typical turn-off time
t
q
I
TM
= 750 A, T
J
= T
J
maximum, dI/dt = - 60 A/µs
V
R
= 50, dV/dt = 20 V/µs, Gate 0 V 100
Ω
200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
T
J
= 130 °C, linear to V
D
= 80 % V
DRM
1000
V/µs
RMS insulation voltage
V
INS
t = 1 s
3000
V
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM/
V
RRM
applied
100
mA