beautypg.com

Vsk.430..pbf series, Vishay high power products, Power modules) – C&H Technology VSK.430..PbF Series User Manual

Page 3: On-state conduction, Switching, Blocking

background image

www.vishay.com

For technical questions, contact: [email protected]

Document Number: 93748

2

Revision: 02-Apr-08

VSK.430..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor, 430 A

(SUPER MAGN-A-PAK

TM

Power Modules)

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current
at case temperature

I

T(AV),

I

F(AV)

180° conduction, half sine wave

430

A

82

°C

Maximum RMS on-state current

I

T(RMS)

180° conduction, half sine wave at T

C

= 82 °C

675

A

Maximum peak, one-cycle,
non-repetitive surge current

I

TSM,

I

FSM

t = 10 ms

No voltage
reapplied

Sinusoidal half wave,
initial T

J

= T

J

maximum

15.7

kA

t = 8.3 ms

16.4

t = 10 ms

100 % V

RRM

reapplied

13.2

t = 8.3 ms

13.8

Maximum I

2

t for fusing

I

2

t

t = 10 ms

No voltage
reapplied

1232

kA

2

s

t = 8.3 ms

1125

t = 10 ms

100 % V

RRM

reapplied

871

t = 8.3 ms

795

Maximum I

2

√t for fusing

I

2

√t

t = 0.1 to 10 ms, no voltage reapplied

12 320

kA

2

√s

Low level value of threshold voltage

V

F(TO)1

(16.7 % x

π x I

T(AV)

< I <

π x I

T(AV)

), T

J

= T

J

maximum

0.96

V

High level value of threshold voltage

V

F(TO)2

(I >

π x I

T(AV)

), T

J

= T

J

maximum

1.06

Low level value of on-state slope resistance

r

f1

(16.7 % x

π x I

T(AV)

< I <

π x I

T(AV)

), T

J

= T

J

maximum

0.51

m

Ω

High level value of on-state slope resistance

r

f2

(I

>

π x I

T(AV)

), T

J

= T

J

maximum

0.45

Maximum on-state or forward voltage drop

V

TM,

V

FM

I

pk

= 1500 A, T

J

= 25 °C, t

p

= 10 ms sine pulse

1.65

V

Maximum holding current

I

H

T

J

= 25 °C, anode supply 12 V resistive load

500

mA

Typical latching current

I

L

1000

SWITCHING

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

Maximum rate of rise of turned-on current

dI/dt

T

J

= T

J

maximum, I

TM

= 400 A, V

DRM

applied

1000

A/µs

Typical delay time

t

d

Gate current 1 A, dI

g

/dt = 1 A/µs

V

d

= 0.67 % V

DRM

, T

J

= 25 °C

2.0

µs

Typical turn-off time

t

q

I

TM

= 750 A, T

J

= T

J

maximum, dI/dt = - 60 A/µs

V

R

= 50, dV/dt = 20 V/µs, Gate 0 V 100

Ω

200

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum critical rate of rise of
off-state voltage

dV/dt

T

J

= 130 °C, linear to V

D

= 80 % V

DRM

1000

V/µs

RMS insulation voltage

V

INS

t = 1 s

3000

V

Maximum peak reverse and
off-state leakage current

I

RRM

,

I

DRM

T

J

= T

J

maximum, rated V

DRM/

V

RRM

applied

100

mA