Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GT140DA60U User Manual
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VS-GT140DA60U
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Vishay Semiconductors
Revision: 20-Sep-12
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Document Number: 94772
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Fig. 1 - Maximum DC IGBT Collector Current
vs. Case Temperature
Fig. 2 - Typical Collector to Emitter Current
Output Characteristics of IGBT
Fig. 3 - Maximum Allowable Forward Current
vs. Case Temperature, Diode Leg
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN. TYP. MAX.
UNITS
Maximum junction and storage temperature
T
J
, T
Stg
- 40
-
175
°C
Junction to case thermal resistance
IGBT
R
thJC
-
-
0.23
°C/W
Diode
-
-
0.63
Case to sink thermal resistance, flat greased
surface
R
thCS
-
0.1
-
Mounting torque, on termianls and heatsink
T
-
-
1.3
Nm
Weight
-
30
-
g
Case style
SOT-227
I
C
-
Continuous Collector Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
0
20 40 60 80 100 120 140 160 180 200 220
DC
V
CE
-
Collector-to-Emitter Voltage (V)
I
C
-
Collector
-to-Emitter Curr
ent (A)
0
50
100
150
200
250
300
0.0
1.0
2.0
3.0
4.0
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
V
GE
= 15 V
I
F
-
Continuous
Forward Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
0
20
40
60
80
100
120
0
40
80
120
160
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
I
F
-
Forwar
d
Curr
ent (A)
V
F
-
Forward Voltage Drop Characteristics (V)