Vishay semiconductors, Electrical specifications (t, 25 °c unless otherwise specified) – C&H Technology VS-GT140DA60U User Manual
Page 3: Switching characteristics (t
VS-GT140DA60U
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Vishay Semiconductors
Revision: 20-Sep-12
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Document Number: 94772
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown
voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA
600
-
-
V
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 100 A
-
1.7
2.0
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C
-
2.0
2.2
V
GE
= 15 V, I
C
= 100 A, T
J
= 175°C
-
2.15
-
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA
3.5
4.6
6.5
V
CE
= V
GE
, I
C
= 250 μA, T
J
= 125 °C
-
2.65
-
Temperature coefficient of threshold
voltage
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
-
- 16.8
-
mV/°C
Collector to emitter leakage current
I
CES
V
GE
= 0 V, V
CE
= 600 V
-
0.6
100
μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
-
0.15
3
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 175 °C
-
8
-
Forward voltage drop, diode
V
FM
I
F
= 40 A, V
GE
= 0 V
-
1.74
2.2
V
I
F
= 40 A, V
GE
= 0 V, T
J
= 125 °C
-
1.35
1.74
I
F
= 40 A, V
GE
= 0 V, T
J
= 150 °C
-
1.2
-
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
-
-
± 200
nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Turn-on switching loss
E
on
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode
recovery.
Diode used
60APH06
-
0.43
-
mJ
Turn-off switching loss
E
off
-
1.50
-
Total switching loss
E
tot
-
1.93
-
Turn-on delay time
t
d(on)
-
130
-
ns
Rise time
t
r
-
50
-
Turn-off delay time
t
d(off)
-
127
-
Fall time
t
f
-
82
-
Turn-on switching loss
E
on
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 125 °C
-
0.43
-
mJ
Turn-off switching loss
E
off
-
2.12
-
Total switching loss
E
tot
-
2.55
-
Turn-on delay time
t
d(on)
-
130
-
ns
Rise time
t
r
-
52
-
Turn-off delay time
t
d(off)
-
130
-
Fall time
t
f
-
100
-
Reverse bias safe operating area
RBSOA
T
J
= 175 °C, I
C
= 350 A, R
g
= 22
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
P
= 600 V, L = 500 μH
Fullsquare
Diode reverse recovery time
t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
-
72
-
ns
Diode reverse recovery current
I
rr
-
5.5
-
A
Diode recovery charge
Q
rr
-
200
-
nC
Diode reverse recovery time
t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
-
144
-
ns
Diode peak reverse current
I
rr
-
13
-
A
Diode recovery charge
Q
rr
-
930
-
nC
Short circuit safe operating area
SCSOA
T
J
= 175 °C, R
g
= 22
V
GE
= 15 V to 0 V,
V
CC
= 400 V, V
P
= 600 V
3
μs