C&H Technology TBS7xx3203DH - Manual (Page 4)

Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697 (412)925-7272 WWW.PWRX.COM
Phase Control Thyristor
3200 Amperes/Up to 1600 Volts
Electrical Characteristics, T
J
=25
°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Repetitive Peak Reverse Leakage
Current I
RRM
T
J
=125 °C, V
R
=V
RRM
150 mA
Repetitive Peak Forward Leakage
Current I
DRM
T
J
=125
°C, V
D
=V
DRM
150 mA
Peak On-State Voltage V
TM
T
J
=25
°C, I
TM
=3000A
Duty Cycle < 0.01%
1.25 V
Threshold Voltage, Low-level V
(TO)1
T
J
=125
°C, for 500A≤I
TM
<10,000A 0.776 V
Slope Resistance, Low-level r
T1
0.0889 m
Ω
Threshold Voltage, High-level V
(TO)2
T
J
=125
°C, for I
TM
<10,0000A 1.032 V
Slope Resistance, High-level r
T2
0.0735 m
Ω
ABCD V
TM
Modeling Coefficients A
B
C
D
T
J
=125 °C, for 500A≤I
TM
<60,000A 0.7393
-0.01883
0.05747
0.005836
V
-
m Ω
−
Typical Delay Time t
d
I
TM
=1000A, V
D
=0.5V
DRM
3 µs
Maximum Turn-Off Time t
q
T
J
=125
°C, I
T
=1000A, di
R
/dt=25A/
µs
dv/dt=20V/ µs linear to 80% V
DRM
350 µs
Minimum Critical dv/dt -
Expodential to V
DRM
dv/dt T
J
=125
°C 300 V/
µs
Gate Trigger Current I
GT
T
J
=25 °C, V
D
=12V 200 mA
Gate Trigger Voltage V
GT
T
J
=25
°C, V
D
=12V 4.0 V
Non-Triggering Gate Voltage V
GDM
T
J
=125 °C, V
D
=V
DRM
0.5 V
Peak Forward Gate Current I
GTM
4 A
Peak Reverse Gate Voltage V
GRM
10 V
Thermal Characteristics
Characteristics Symbol Min. Typ. Max. Units
Maximum Thermal Resistance, Double
Sided Cooling
Junction to Case
Case to Sink
R ΘJC
R ΘCS
.010
.002 °C/W
°C/W
TBS716P13.DOC.12/10/97
TBS7
3200A