Vishay semiconductors – C&H Technology VS-175BGQ030 User Manual
Page 3
VS-175BGQ030
www.vishay.com
Vishay Semiconductors
Revision: 04-Jul-11
2
Document Number: 94583
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
TYP.
MAX.
UNITS
Forward voltage drop
V
FM
(1)
100 A
T
J
= 25 °C
0.47
0.49
V
175 A
0.55
0.59
100 A
T
J
= 150 °C
0.36
0.39
175 A
0.47
0.52
Reverse leakage current
I
RM
(1)
T
J
= 125 °C, V
R
= 15 V
160
220
mA
T
J
= 150 °C, V
R
= 30 V
1400
2000
T
J
= 25 °C
V
R
= Rated V
R
1.3
4.5
T
J
= 125 °C
450
650
Maximum junction capacitance
C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C
8500
pF
Typical series inductance
L
S
Measured from tab to mounting plane
3.5
nH
Maximum voltage rate of change
dV/dt
Rated V
R
10 000
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150
°C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
0.25
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
0.20
Approximate weight
5
g
0.18
oz.
Mounting torque
minimum
1.2 (10)
N · m
(lbf · in)
maximum
2.4 (20)
Marking device
Case style PowerTab
®
175BGQ045