C&H Technology CPV362M4FPbF - Manual (Page 7)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94361
6 Revision: 29-Apr-08
CPV362M4FPbF
Vishay High Power Products IGBT SIP Module
(Fast IGBT)
Fig. 17 - Typical dI
(REC)M
/dt vs dI
F
/dt
Fig. 18a - Test Circuit for Measurement of I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
,
I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 18b - Test Waveforms of Circuit of Fig. 18a,
Defining E
off
, t
d(off)
, t
f
Fig. 18c - Test Waveforms of Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 18d - Test Waveforms of Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
100
10 000
1000
dI
(rec)M
/dt - (A/µs)
dI
F
/dt - (A/µs)
1000 100
I
F
= 16 A
I
F
= 8.0 A
I
F
= 4.0 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
D.U.T.
430 µF
80 %
of V
CE
Same type
device
as
D.U.T.
I
C
V
CE
t1 t2
90 % I
C 10 %
V
CE
t
d
(off) tf
I
C
5 % I
C
t1 + 5 µs
V
CE
I
C
dt
t1
90 % V
GE
+ V
GE
∫
Eoff =
∫
t2
V
CE
I
C
dt
t1
5 % V
CE
I
C
I
pk
V
CC
10 %
I
C
Vce
t1 t2
D.U.T. voltage
and current
Gate voltage D.U.T.
+ V
G
10 % + V
G
90 % I
C
tr t
d
(on)
Eon =
Diode reverse
recovery energy
tx
∫
E
rec
=
t4
V
d
I
C
dt
t3
t4 t3
Diode recovery
waveforms
I
C
V
pk
10 % V
CC
I
rr
10 % I
rr
V
CC
t
rr
∫
Q
rr
=
t
rr
I
C
dt
tx
V
G
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
t0 t1 t2