C&H Technology CM600DU-12NFH - Manual (Page 4)

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
07/11 Rev. 2
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Leakage Current IGES ±VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5.0 6.0 7.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C *6 — 2.0 2.7 Volts
IC = 600A, VGE = 15V, Tj = 125°C *6 — 1.95 — Volts
Input Capacitance Cies — — 166 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 11 nF
Reverse Transfer Capacitance Cres — — 6.0 nF
Gate Charge QG VCC = 300V, IC = 600A, VGE = 15V — 3720 — nC
Turn-on Delay Time td(on) — — 650 ns
Rise Time tr VCC = 300V, IC = 600A, — — 250 ns
Turn-off Delay Time td(off) VGE = ±15V, RG = 2.0Ω, — — 800 ns
Fall Time tf Inductive Load Switching Operation — — 150 ns
Emitter-Collector Voltage VEC *1 IE = 600A, VGE = 0V *6 — 2.0 2.6 Volts
Reverse Recovery Time trr *1 VCC = 300V, IE = 600A, VGE = ±15V — — 200 ns
Reverse Recovery Charge Qrr *1 RG = 2.0Ω, Inductive Load — 11 — µC
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 600A, — 11 — mJ
Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 2.0Ω, — 27 — mJ
Reverse Recovery Energy per Pulse Err *1 Tj = 125°C, Inductive Load — 6.3 — mJ
Internal Gate Resistance rg Per Switch — 0.8 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.