Vishay semiconductors, Diodes, 15 a – C&H Technology GB15XP120KTPbF User Manual
Page 8
Document Number: 93913
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Revision: 03-Aug-10
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,
7
GB15XP120KTPbF
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
®
Diodes, 15 A
Vishay Semiconductors
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0.001
0.01
0.1
1
10
SINGLE PULSE
(THERMAL RESPONSE)
0.5
0.3
0.1
0.05
0.02
0.01
Ri (°C/W)
0.196
0.515
0.389
τi (sec)
0.000547
0.025615
0.037176
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
t1 , Rectangular Pulse Duration (sec)
T
h
er
mal
Resp
onse (Z
th
JC
)
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/Ri
Ci=
τi/Ri
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0.001
0.01
0.1
1
10
SINGLE PULSE
(THERMAL RESPONSE)
0.5
0.3
0.1
0.05
0.02
0.01
Ri (°C/W)
0.390
1.023
0.287
τi (sec)
0.001245
0.03327
0.052639
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
t1 , Rectangular Pulse Duration (sec)
T
h
er
mal
Respon
se (Zth
JC
)
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/Ri
Ci=
τi/Ri