C&H Technology VS-GB150TH120U - Manual (Page 5)

VS-GB150TH120U
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Vishay Semiconductors
Revision: 19-Oct-12 4 Document Number: 94714
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
0
50
100
150
200
250
300
350
0 300 600 900 1200 1500
V
CE
(V)
I C
(A)
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 6.8 Ω
I
C
, Module
Z
thJC
(K/W)
t (s)
10 0
10 -1
10 -2
10 -3
10 -3
10 -2 10 -1 10 0 10 1
IGBT
V
F
(V)
I F
(A)
0
50
100
150
200
250
300
0.5 0 1 1.5 2 2.5 3
125 °C
25 °C
E (mJ)
0
2
4
6
8
10
12
0 50 100 150 200 250 300
I
F
(A)
E
rec
V
GE
= - 15 V
T
J
= 125 °C
V
CC
= 600 V
R
g
= 6.8 Ω