Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB150TH120U User Manual
Page 4
VS-GB150TH120U
www.vishay.com
Vishay Semiconductors
Revision: 19-Oct-12
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Document Number: 94714
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction temperature range
T
J
-
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
IGBT
R
JC
-
-
0.109
K/W
Diode
-
-
0.180
Case to sink (Conductive grease applied)
R
CS
-
0.035
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
Weight of module
-
300
-
g
0
50
100
150
200
250
300
0
1
2
3
4
5
V
CE
(V)
I
C
(A)
V
GE
= 15 V
25 °C
125 °C
0
50
100
150
200
250
300
4
5
6
7
8
9 10 11
V
GE
(V)
I
C
(A)
V
CE
= 20 V
25 °C
125 °C
I
C
(A)
0
10
20
30
40
50
60
0
50
100
150
200
250
300
Eon
Eoff
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 6.8
Ω
V
CC
= 600 V
E
on
,E
of
f
(mJ)
R
g
(
Ω)
E
on
,E
of
f
(mJ)
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 150 A
V
CC
= 600 V
E
on
E
off