Vishay semiconductors – C&H Technology VS-GB150TH120U User Manual
Page 2
VS-GB150TH120U
www.vishay.com
Vishay Semiconductors
Revision: 19-Oct-12
1
Document Number: 94714
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 150 A
FEATURES
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inductive heating
• Electronic welder
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
150 A
V
CE(on)
(typical)
at I
C
= 150 A, T
J
= 25 °C
3.10 V
Double INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
280
A
T
C
= 80 °C
150
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
300
Diode continuous forward current
I
F
T
C
= 80 °C
150
Diode maximum forward current
I
FM
(1)
t
p
= 1 ms
300
Maximum power dissipation
P
D
T
J
= 150 °C
1147
W
Short circuit withstand time
T
SC
T
J
= 125 °C
10
μs
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V