Vishay semiconductors – C&H Technology VS-GA250SA60S User Manual
Page 5
VS-GA250SA60S
www.vishay.com
Vishay Semiconductors
Revision: 20-Jul-12
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Document Number: 94704
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Fig. 7 - Typical IGBT Energy Losses vs. I
C
, T
J
= 125 °C,
V
CC
= 480 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
,
Diode used: 60APH06
Fig. 8 - Typical IGBT Switching Time vs. I
C
,
T
J
= 125 °C, V
CC
= 480 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
,
Diode used: 60APH06
Fig. 9 - Typical IGBT Energy Losses vs. R
g
,
T
J
= 125 °C, I
C
= 200 A, V
CC
= 480 V, V
GE
= 15 V, L = 500 μH,
Diode used: 60APH06
Fig. 10 - Typical IGBT Switching Time vs. R
g
,
T
J
= 125 °C, I
C
= 200 A, V
CC
= 480 V, V
GE
= 15 V, L = 500 μH,
Diode used: 60APH06
Fig. 11 - Maximum Thermal Impedance Z
thJC
Characteristics
I
C
-
Collector Current (A)
S
witching Energy (mJ)
10
100
1000
0.1
1
25 50 75 100 125 150 175 200 225
E
off
E
on
I
C
-
Collector Current (A)
S
witching Time (μs)
0.01
0.1
1
0
25
50
75
100 125 150 175 200 225
t
f
t
d(off)
t
d(on)
t
r
Energy Losses (mJ)
R
g
(
Ω)
0.1
1
10
100
1000
0
10
20
30
40
50
E
off
E
on
S
witching Time (μs)
R
g
(
Ω)
0.01
0.1
1
10
0
10
20
30
40
50
60
t
f
t
d(off)
t
d(on)
t
r
Z
thJC
- Thermal Impe
d
ance Junction
to Case (°C/W)
Rectangular Pulse Duration (s)
0.1
1
0.001
0.01
0.0001 0.001 0.01 0.1 1 10
0.001
DC
0.02
0.05
0.1
0.25
0.50
0.75