C&H Technology ST110SPbF Series - Manual (Page 7)

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6 Revision: 30-Apr-08
ST110SPbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 110 A
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST110S Series
Rectangular gate pulse
(4)
1 - Thyristor
2 - Essential part marking
3 - 0 = Converter grade
4
9 - Lead (Pb)-free
- S = Compression bonding stud
8 - V = Glass-metal seal (only up to 1200 V)
5 - Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6 - P = Stud base 1/2"-20UNF- 2 A threads
7 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
None = Ceramic housing (over 1200 V)
Device code
5 1 3 2 4 6 7 8 9
ST 11 0 S 16 P 0 V PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95078