C&H Technology VSKU-V105..PbF Series - Manual (Page 7)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94423
6 Revision: 24-Apr-08
VSKU/V105..PbF Series
Vishay High Power Products Thyristor/Thyristor, 105 A
(ADD-A-PAK TM Generation 5 Power Modules)
Fig. 10 - Current Ratings Characteristics Fig. 11 - Current Ratings Characteristics
Fig. 12 - Thermal Impedance Z
thJC
Characteristics
Fig. 13 - Gate Characteristics
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 100
100 A
50 A
Rate Of Fall Of On-state Current - di/ dt (A/ µs) M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
- Q
rr
(µC
)
I = 200 A
TM
20 A
10 A
VSK.105.. Series
T = 125 °C
J
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 100
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t -
Ir
r
(A
)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
100 A
50 A
I = 200 A
TM
20 A
10 A
VSK.105.. Series
T = 125 °C
J
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
th
J
C
Tr
a
n
si
e
n
t
Th
e
rm
a
l I
m
p
e
d
a
n
c
e
Z
(K
/W
)
VSK.105.. Series
Per Junc tion
Steady State Value:
R = 0.27 K/ W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b )
(a)
(4) (3) (2) (1)
Instantaneous Gate Current (A)
In
st
an
ta
n
e
ou
s G
a
te
V
o
lt
ag
e
(
V
)
TJ
=
-4
0
°
C
TJ
=
2
5
°
C
TJ
=
12
5
°C
a)Rec ommended load line for
b)Rec ommended load line for
VGD
IGD
Frequenc y Limited by PG(AV)
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rated di/ dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/d t: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
Rec tangular gate pulse
VSK.105.. Series