C&H Technology VSKU-V105..PbF Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94423
2 Revision: 24-Apr-08
VSKU/V105..PbF Series
Vishay High Power Products Thyristor/Thyristor, 105 A
(ADD-A-PAK TM Generation 5 Power Modules)
ELECTRICAL SPECIFICATIONS
Notes
(1) I 2 t for time t
x
= I 2 √t x √t
x
(2) Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
) 2
(3) 16.7 % x
π x I
AV
< I <
π x I
AV
(4) I > π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM
,
I
DRM
AT 130 °C
mA
VSKU/V105
04 400 500 400
20
08 800 900 800
12 1200 1300 1200
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
180° conduction, half sine wave,
T
C
= 85 °C
105
A
Maximum continuous RMS on-state current I
T(RMS)
DC 165
T
C
77 °C
Maximum peak, one-cycle
non-repetitive on-state current
I
TSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
1785
A
t = 8.3 ms 1870
t = 10 ms 100 % V
RRM
reapplied
1500
t = 8.3 ms 1570
t = 10 ms T
J
= 25 °C
no voltage reapplied
2000
t = 8.3 ms 2100
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied
Initial T
J
= T
J
maximum
15.91
kA 2 s
t = 8.3 ms 14.52
t = 10 ms 100 % V
RRM
reapplied
11.25
t = 8.3 ms 10.27
t = 10 ms T
J
= 25 °C
no voltage reapplied
20.00
t = 8.3 ms 18.30
Maximum I 2 √t for fusing
I 2 √t (1)
t = 0.1 to 10 ms, no voltage reapplied
T
J
= T
J
maximum
159.1 kA 2 √s
Maximum value or threshold voltage V
T(TO)
(2)
Low level (3)
T
J
= T
J
maximum
0.80
V
High level (4) 0.85
Maximum value of on-state
slope resistance
r
t
(2)
Low level (3)
T
J
= T
J
maximum
2.37
m Ω
High level (4) 2.25
Maximum peak on-state or forward voltage
V
TM
I
TM
= π x I
T(AV)
T
J
= 25 °C 1.64 V
V
FM
I
FM
=
π x I
F(AV)
Maximum non-repetitive rate of
rise of turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
π x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 µs, t
p
> 6 µs
150 A/µs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400