C&H Technology VSKU-V105..PbF Series - Manual (Page 4)

Document Number: 94423 For technical questions, contact: [email protected] www.vishay.com
Revision: 24-Apr-08 3
VSKU/V105..PbF Series
Thyristor/Thyristor, 105 A
(ADD-A-PAK TM Generation 5 Power Modules)
Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. VSKU105/16AS90
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
12
W
Maximum average gate power P
G(AV)
3
Maximum peak gate current I
GM
3 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum gate voltage required to trigger V
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum gate current required to trigger I
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
270
mA T
J
= 25 °C 150
T
J
= 125 °C 80
Maximum gate voltage that will not trigger V
GD
T
J
= 125 °C, rated V
DRM
applied
0.25 V
Maximum gate current that will not trigger I
GD
6 mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state leakage
current at V
RRM
, V
DRM
I
RRM
,
I
DRM
T
J
= 130 °C, gate open circuit 20 mA
RMS insulation voltage V
INS
50 Hz, circuit to base, all terminals shorted
2500 (1 min)
3500 (1 s)
V
Maximum critical rate of rise of off-state voltage dV/dt (1) T
J
= 130 °C, linear to 0.67 V
DRM
, gate open circuit 500 V/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating temperature range T
J
- 40 to 130
°C
Storage temperature range T
Stg
- 40 to 125
Maximum internal thermal resistance,
junction to case per module
R
thJC
DC operation 0.135
K/W
Typical thermal resistance, case to heatsink R
thCS
Mounting surface flat, smooth and greased 0.1
Mounting torque ± 10 %
to heatsink A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
5
Nm
busbar 3
Approximate weight
110 g
4 oz.
Case style JEDEC TO-240AA
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSKU/V105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W