C&H Technology GA75TS12UPbF - Manual (Page 2)

Document Number: 94427 For technical questions, contact: [email protected] www.vishay.com
Revision: 18-Jan-08 1
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
GA75TS120UPbF
Vishay High Power Products
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high operating
frequencies 8 to 40 kHz in hard switching,
> 200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED ® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 110 A
V
CE(on)
at 75 A, 25 °C 2.5 V
INT-A-PAK
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 110
A
T
C
= 76 °C 75
Pulsed collector current I
CM
Repetitive rating; V
GE
= 20 V, pulse width
limited by maximum junction temperature
150
Peak switching current I
LM
See fig. 17 150
Peak diode forward current I
FM
150
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500
Maximum power dissipation P
D
T
C
= 25 °C 390
W
T
C
= 85 °C 200
Operating junction temperature range T
J
- 40 to + 150
°C
Storage temperature range T
Stg
- 40 to + 125