C&H Technology VS-GB100TP120N - Manual (Page 6)

VS-GB100TP120N
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Vishay Semiconductors
Revision: 17-May-13 5 Document Number: 94821
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Fig. 9 - Diode Switching Loss vs. R
g
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
R
g
( Ω)
0 10 30 20 40 60 50
E (mJ)
E
rec
8
7
6
5
4
3
2
1
0
V
GE
= - 15 V
T
J
= 125 °C
I
C
= 100 A
V
CC
= 600 V
t (s)
Z
thJC
(K/W)
Diode
10 0
10 -1
10 -2
10 0 10 1 10 -1 10 -2 10 -3
1
6
7
3 2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95524