C&H Technology VS-GB100TP120N - Manual (Page 5)

VS-GB100TP120N
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Vishay Semiconductors
Revision: 17-May-13 4 Document Number: 94821
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
C
200
220
180
160
140
120
100
80
60
40
20
0
V
CE
(V)
I C
(A)
0 250 750 500 1250 1000 1500
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
I
C
, Module
t (s)
Z
thJC
(K/W)
IGBT
10 0
10 -1
10 -2
10 0 10 1 10 -1 10 -2 10 -3
200
175
150
125
100
75
50
25
0
0 0.5 1.5 1 2 2.5 3
V
F
(V)
I F
(A)
25 °C
125 °C
0 50 25 75 100 125 175 150 200
10
9
8
7
6
5
4
3
2
1
0
V
GE
= - 15 V
T
J
= 125 °C
R
g
= 5.6 Ω
V
CC
= 600 V
E
rec
I
F
(A)
E (mJ)