Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB100TP120N User Manual
Page 4
VS-GB100TP120N
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
3
Document Number: 94821
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature
T
J
-
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT (per 1/2 module)
R
thJC
-
-
0.19
K/W
Diode (per 1/2 module)
-
-
0.28
Case to sink
R
thCS
Conductive grease applied
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight of module
150
g
200
175
150
125
100
75
50
25
0
0
0.5
1.5
1
2
2.5
3
V
CE
(V)
I
C
(A)
V
GE
= 15 V
25 °C
125 °C
200
175
150
125
100
75
50
25
0
5
6
8
7
9
10
11
12
13
V
GE
(V)
I
C
(A)
125 °C
V
CE
= 20 V
25 °C
I
C
(A)
E
on
, E
of
f
(mJ)
30
25
20
15
10
5
0
0
25
75
50
100
125
150
175
200
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5.6
Ω
V
CC
= 600 V
E
on
E
off
R
g
(
Ω)
E
on
, E
of
f
(mJ)
30
25
40
35
20
15
10
5
0
0
10
30
20
40
50
60
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 100 A
V
CC
= 600 V
E
on
E
off