C&H Technology GA200SA60SP - Manual (Page 6)

Document Number: 94363 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-Apr-08 5
GA200SA60SP
Insulated Gate Bipolar Transistor
(Standard Speed IGBT), 100 A
Vishay High Power Products
Fig. 11 - Typical Switching Losses vs. Collector Current
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 14 - Turn-Off SOA
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Lost Test Circuit
Total Switching Losses (mJ)
100 150 200 250 300 350
0
40
80
120
160
I
C
- Collector Current (A)
R
G
= 2.0 Ω
T
J
= 150 °C
V
CC
= 480 V
V
GE
= 15 V
D.U.T.
50 V
L
V
C
*
* Driver same type as D.U.T.; V
C
= 80 % of V
CE
(max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I
d
1000 V
1
2
1
2
I C
- Collector Current (A)
1
10
100
1000
1 10 100 1000
Safe operating area
V
CE
- Collector to Emitter Voltage (V)
V
GE
= 20 V
T
J
= 125 °C
480 V
4 x I
C
at 25 °C
480 µF
960 V
0 - 480 V
R
L
= =
50 V
Driver*
1000 V
D.U.T.
I
C
V
C
L
* Driver same type as D.U.T., V
C
= 480 V
3
1
2