C&H Technology GA200SA60SP - Manual (Page 2)

Document Number: 94363 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-Apr-08 1
Insulated Gate Bipolar Transistor
(Standard Speed IGBT), 100 A
GA200SA60SP
Vishay High Power Products
FEATURES
• Standard: Optimized for minimum saturation
voltage and low operating frequencies up to 1 kHz
• Lowest conduction losses available
• Fully isolated package (2500 V
AC
)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL pending
• Completely lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
PRODUCT SUMMARY
V
CES
600 V
V
CE(on)
(typical) 1.10 V
V
GE
15 V
I
C
100 A
SOT-227
C
G
E
n-channel
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 200
A
T
C
= 100 °C 100
Pulsed collector current I
CM
Repetitive rating; V
GE
= 20 V, pulse width limited
by maximum junction temperature
See fig. 15 400
Clamped Inductive load current I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 µH, R
G
= 2.0
Ω,
See fig. 14
400
Gate to emitter voltage V
GE
± 20 V
Reverse voltage avalanche energy E
ARV
Repetitive rating; pulse width limited by
maximum junction temperature
155 mJ
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
Maximum power dissipation P
D
T
C
= 25 °C 630
W
T
C
= 100 °C 250
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150 °C
Mounting torque 6-32 or M3 screw 12 (1.3) lbf
⋅ in (N ⋅ m)
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case R
thJC
- 0.20
°C/W
Case to sink, flat, greased surface R
thCS
0.05 -
Weight of module 30 - g